학술논문
Factors affecting the interconnection resistance and yield in multilayer polyimide/copper structures
Document Type
Periodical
Author
Source
IEEE Transactions on Components, Hybrids, and Manufacturing Technology IEEE Trans. Comp., Hybrids, Manufact. Technol. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on. 16(1):74-88 Feb, 1993
Subject
Language
ISSN
0148-6411
1558-3082
1558-3082
Abstract
The use of a lift-off technique to fabricate a high-density structure consisting of multiple layers of metal/polyimide thin-film structures on a silicon substrate is described. To achieve better performance and high yield, the process design, the processing parameters, the thickness of the Cr/Cu/Cr metallurgy, and the use of suitable polyimide dielectrics, were evaluated. The plasma processing conditions, the types of passivation metals on Cu, and the use of a siloxane-polyimide as the gap-fill/etch-stop material were all shown to play a critical role in affecting the interconnection resistance and yield of the multilayer thin-film structures. By optimizing these parameters the feasibility of fabricating high-density thin-film wiring layers with good yield is demonstrated.ETX