부산대학교 도서관

The higher switching speed of wide-bandgap semiconductor devices can potentially lead to undesired switching oscillations, which cause electromagnetic interference or even result in device failures. To identify the root of switching oscillations, this paper provides a comparative evaluation for the oscillation stability of silicon carbide (SiC) MOSFETs. Both transfer function and state-space model are adopted to model the circuit in switching period. Different stability analysis methods, i.e., the pole map and eigenvalues, are utilized to analyze potential switching oscillations. Simulation and experimental results are conducted to verify the effectiveness of the developed models and analysis approaches.