부산대학교 도서관

A novel vertical channel face-tunneling field effect transistor (VC-TFET) using Ge/SiGe material is proposed in this paper. The proposed device structure enhances the on-state drive current without increasing the device footprint and also provides lower off-state leakage current, steeper sub-threshold slope and higher $I_{on}/I_{off}$ current ratio compared to the other TFETs. The design of SiGe-material in the drain region suppresses the leakage current, and the channel region with small bandgap Ge enhances the tunneling current. Additionally, the complementary vertical channel TFET is also used to demonstrate the SRAM circuit performance for low power application. Novel SRAM topologies are proposed to eliminate the read disturb and enhance the RSNM/WSNM of SRAM.