부산대학교 도서관

In this work, we propose a FinFET resistance gate switching nonvolatile memory (RG-FinFET) which comprises a simple RRAM structure on top of a HKMG FinFET gate. The readout is taken from the FinFET V T or I D and its operation is based on the resistance switching instead of the conventional charge storage. The SET/RESET operation of the memory is made by the edge tunneling between top gate and source. The RG-FinFET shows ultra-low switching current, FORMing-free and ultra-fast SET/RESET speed. Comparing to conventional drain-type 1T1R, proposed gate-type 1T features low power consumption, smaller size in layout and larger window. It also exhibits excellent reliabilities, e.g., a very large window with highly stable retention, no sneak path, immunity to disturbances etc. Moreover, RG-FinFET is fully compatible with the logic CMOS technology and well-suited for NOR type memories, showing great potential for the future embedded applications.