학술논문
Electromigration In Cu/Sn-58Bi/Cu Interconnects
Document Type
Conference
Author
Source
2007 8th International Conference on Electronic Packaging Technology Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on. :1-3 Aug, 2007
Subject
Language
Abstract
The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 × 10 4 A/cm 2 , 95°C for 60hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.