학술논문

Generalized Memristive Device SPICE Model and its Application in Circuit Design
Document Type
Periodical
Source
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on. 32(8):1201-1214 Aug, 2013
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Memristors
Mathematical model
Integrated circuit modeling
SPICE
Equations
Data models
Resistance
Device
memristor
model
variation
Language
ISSN
0278-0070
1937-4151
Abstract
This paper presents a SPICE model for memristive devices. It builds on existing models and is correlated against several published device characterization data with an average error of 6.04%. When compared to existing alternatives, the proposed model can more accurately simulate a wide range of published memristors. The model is also tested in large circuits with up to 256 memristors, and was less likely to cause convergence errors when compared to other models. We show that the model can be used to study the impact of memristive device variation within a circuit. We examine the impact of nonuniformity in device state variable dynamics and conductivity on individual memristors as well as a four memristor read/write circuit. These studies show that the model can be used to predict how variation in a memristor wafer may impact circuit performance.