학술논문

A Memristor Device Model
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(10):1436-1438 Oct, 2011
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Memristors
Mathematical model
Threshold voltage
Neuromorphics
Integrated circuit modeling
Conductivity
Simulation
Device model
memristive
memristor
simulation
Language
ISSN
0741-3106
1558-0563
Abstract
This letter proposes a new mathematical model for memristor devices. It builds on existing models and is correlated against several published device characterizations. This letter identifies significant discrepancies between the existing models and published device characterization data. The proposed model addresses these discrepancies. In particular, it allows modeling of memristor-based neuromorphic systems.