학술논문
Terahertz imaging with GaAs and GaN plasma field effect transistors detectors
Document Type
Conference
Author
Source
2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems Mixed Design of Integrated Circuits and Systems, 2016 MIXDES - 23rd International Conference. :74-77 Jun, 2016
Subject
Language
Abstract
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field effect transistors based THz detectors: demonstrators of the imagers (cameras and linear scanners) developed for fast postal security and for nondestructive industrial quality control.