학술논문
Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET
Document Type
Conference
Author
Source
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022
Subject
Language
Abstract
In this work, the scalability of Gate-All-Around Tunnel FETs has been studied based on TCAD simulation. The competition behavior of the synthetic electric field effects and quantum confinement effects in extremely scaled tunnel devices has been highlighted and discussed for the first time. Numerical simulation results show that, in contrast to the case in conventional MOSFETs, GAA TFETs’ drivability tends to benefit from channel dimensions downscaling. The BTBT dominated drain current could be significantly boosted with GAA nanosheet channel downsizing, attributing to the synthetic electric field effects. And the strong synthetic electric field effects remain dominating till nanosheet thickness