학술논문

High Area Efficiency (6 TOPS/mm2) Multimodal Neuromorphic Computing System Implemented by 3D Multifunctional RRAM Array
Document Type
Conference
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Three-dimensional displays
Neuromorphic engineering
Nonvolatile memory
Memristors
Tin
Reservoirs
Convolutional neural networks
Language
ISSN
2156-017X
Abstract
For the first time, we demonstrated a multifunction three-dimensional (3D) vertical random-access memory (RRAM) array (MF-ЗDRRAM) where different layers exhibit nonvolatile properties and volatile characteristics respectively, to implement multimodal neuromorphic computing. The RRAM cells in the 1 st layer (WL: TiN) and the 2 nd layer (WL: Ru) have different dynamic characteristics, which are used to construct multi-scale reservoirs (M-RC). The RRAM in 3 rd layer (WL: W) exhibits analog switching behavior, applying for convolutional neural network (CNN) and full connection (FC) layer. A multimodal neuromorphic computing system with the network of M-RC+CNN is implemented by the MF-3DRRAM. The multifunction of the fabricated MF-3DRRAM chip is validated through the multimodal video recognition task, exhibiting high accuracy (98%), high area efficiency (6 TOPS/mm2) and low energy consumption (1.4pJ/operation). This proposed MF-3DRRAM is of great significance for miniaturized, low-power hardware implementations for edge computing.