학술논문

Interface-Embedded Pt-Plasmons Enhanced Self-Powered Deep-UV Photodetector
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(4):633-636 Apr, 2024
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Heterojunctions
Couplings
Plasmons
Optical films
Electric fields
Absorption
Surface treatment
Deep-UV photodetector
embedded plasmons
Pt nanoparticles
β-Ga₂O₃
Language
ISSN
0741-3106
1558-0563
Abstract
Motivated by improving the performance of self-powered deep-UV (DUV) photodetector (PD), for the first time, Pt plasmonic nanoparticles (NPs) were embedded in hybrid PEDOT: PSS/ $\beta $ -Ga2O3 heterojunction interface to maximize light-matter interaction. Profiting from the maximized direct enhancement of the optical field in active region by Pt plasmonic NPs resonance coupling, the increased light absorption excites abundant photogenerated carriers, which are rapidly separated by spatially coincident strong junction electric field. As a result, the resultant PD exhibits higher photocurrent and obtains an improved responsivity of 55.4 mA/W, EQE of 27 %, detectivity of $1.9\times 10^{{14}}$ Jones, and faster response speed under self-powered mode. The optimized optical field in active region caused by embedded Pt plasmons resonance coupling is the reason for the improvement of light absorption and photoresponsivity, which is verified by theoretical simulation. This work demonstrates for embedded plasmonic enhancement in DUV spectral region, providing an innovative pathway for the optimized design of high-sensitivity DUV PDs.