학술논문
Advanced Current–Voltage Model of Electrical Contacts to GaAs- and Ge-Based Active Silicon Photonic Devices
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(8):4274-4279 Aug, 2023
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
A new compact model, incorporating bias-dependent Schottky barrier height (SBH), is developed to precisely describe the forward-biased current–voltage characteristic of electrical contacts to Ge and GaAs layers in active silicon photonic (SiPho) components. This generic model enables direct evaluation of both the contact doping concentration and the effective barrier height of any semiconductor diode with a single-sided Schottky contact. Extracted parameters greatly agree with scanning spreading resistance microscopy (SSRM) results and literature reports. Process variabilities and design impacts were studied, and insights brought by the model enlightens future device improvements to realize Ohmic contacts.