부산대학교 도서관

The large memory window of $1.8\mathrm{~V}$ at the low write voltage of $2\mathrm{~V}$ is achieved by stacked two nanosheet (NS) gate-allaround (GAA) Ge 0.98 Si 0.02 FeFETs with the channel phosphorus concentration larger than $1\mathrm{E}18\mathrm{~cm}^{-3}$, enabling the erase of GAA FeFET. Isotropic wet etching was used in channel release process. Stacked two NSs have the advantages of reducing cell variation and 2X read current. The stable storage with data retention of $\gt 1\mathrm{E}4$ seconds, linearly extrapolated 10 years, and high endurance $\gt 1\mathrm{E}11$ cycles are also demonstrated. The thermal budget is as low as $400^{\circ}\mathrm{C}$. The stacked NS architecture with high mobility channels makes FeFETs to be compatible with the $2\mathrm{~nm}$ node and beyond.