학술논문
A monolithic integrated 180 GHz SiGe HBT push-push oscillator
Document Type
Conference
Author
Source
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 Gallium Arsenide and other Compound Semiconductors Application Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European. :341-343 2005
Subject
Language
Abstract
A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2 /spl mu/m SiGe HBT process. Up to -5 dBm output power is achieved at 180 GHz using a technology with a transition frequency f/sub T/ of 200 GHz and maximum oscillation frequency f/sub MAX/ of 275 GHz. Preliminary phase noise measurements show a phase noise of less than -90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.