학술논문
Digital SiGe-chips for data transmission up to 85 Gbit/s
Document Type
Conference
Author
Source
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 Gallium Arsenide and other Compound Semiconductors Application Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European. :245-248 2005
Subject
Language
Abstract
Design and performance of a 2:1 multiplexer and 1:2 demultiplexer IC up to 85.4 Gbit/s are presented. The chips are fabricated in an advanced SiGe technology with a cutoff frequency f/sub t/ of 200 GHz and a maximum oscillation frequency f/sub max/ of 275 GHz. With these two chips electrical data transmission at 80 and 85.4 Gbit/s could be achieved. In addition a pseudo random bit sequence (PRBS) generator IC is shown operating up to 80 Gbit/s and generating a 2/sup 31/-1 or a 2/sup 7/-1 pattern.