학술논문
Experimental measurements of recombination lifetime in proton irradiated power devices
Document Type
Conference
Author
Source
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on. :283-285 2000
Subject
Language
ISSN
1063-6854
Abstract
Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes.