학술논문
Sputter optimization of AlN on diamond substrates for high frequency SAW resonators
Document Type
Conference
Source
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 Electron Devices (CDE), 2011 Spanish Conference on. :1-4 Feb, 2011
Subject
Language
ISSN
2163-4971
Abstract
The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.