학술논문
Monolithic LNAs up to 10 GHz in a production-near 65 GHz f/sub max/ silicon bipolar technology
Document Type
Conference
Author
Source
2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Radio frequency integrated circuits Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE. :135-138 2000
Subject
Language
ISSN
1529-2517
Abstract
Monolithic LNAs for frequencies of 2, 6, and 10 GHz have been fabricated in production-near silicon bipolar technology (0.4 /spl mu/m/65 GHz, f/sub max/). Measured results in 50 /spl Omega/ noise figure and gain are 1.1 dB/28 dB at 1.9 GHz, 1.8 dB/26 dB at 5.6 GHz, 2.8 dB/21.1 dB at 9.5 GHz, and 2.5 dB/16.6 dB at 10 GHz. These noise results are state of the art for homojunction silicon bipolar technologies and are able to compete with the best results for minimum noise figures published for SiGe technologies.