학술논문
An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel
Document Type
Periodical
Author
Source
Journal of Display Technology J. Display Technol. Display Technology, Journal of. 5(12):438-445 Dec, 2009
Subject
Language
ISSN
1551-319X
1558-9323
1558-9323
Abstract
In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.