학술논문
Electrical Characterization of FEOL Bridge Defects in Advanced Nanoscale Devices Using TCAD Simulations
Document Type
Conference
Author
Source
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2018 IEEE International Symposium on the. :1-4 Jul, 2018
Subject
Language
ISSN
1946-1550
Abstract
In this work, we present the electrical characterization of various Front-End-Of-Line (FEOL) bridge defects location using Technology Computer Aided Design (TCAD) based simulation. The electrical characteristics obtained from simulation is useful in identifying the possible locations of the bridge defects. The simulation result correlates well with nano-probing result collected on actual failing devices. Furthermore, simulation of potential defects provides a quick way of understanding how the defect may influence the electrical behavior of transistors.