학술논문
High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography
Document Type
Conference
Author
Agnello, P.; Ivers, T.; Warm, C.; Wise, R.; Wachnik, R.; Schepis, D.; Sankaran, S.; Norum, J.; Luning, S.; Li, Y.; Khare, M.; Grill, A.; Edelstein, D.; Chen, X.; Brown, D.; Augur, R.; Wu, S.; Yu, J.; Wong, R.C.; Werking, J.; Wehella-Gamage, D.; Vayshenker, A.; Van Meer, H.; Van Den Nieuwenhuizen, R.; Tian, C.; Tabakman, K.; Sung, C.Y.; Standaert, T.; Simon, A.; Sim, J.; Sheraw, C.; Restaino, D.; Rausch, W.; Pal, R.; Prindle, C.; Ouyang, X.; Ouyang, C.; Ontalus, V.; Nummy, K.; Nielsen, D.; Nicholson, L.; McKnight, A.; Lustig, N.; Liu, X.; Lee, M.H.; Lea, D.; Larosa, G.; Landers, W.; Kim, B.; Kelling, M.; Jeng, S.-J.; Holt, J.; Hargrove, M.; Grunow, S.; Greco, S.; Gates, S.; Frye, A.; Fisher, P.; Domenicucci, A.; Dimitrakopoulos, C.; Costrini, G.; Chou, A.; Cheng, J.; Butt, S.; Black, L.; Belyansky, M.; Ahsan, I.; Adam, T.; Gabor, A.; Wu, C.-H.J.; Yang, D.; Crouse, M.; Robinson, C.; Corliss, D.; Fonseca, C.; Johnson, J.; Weybright, M.; Waite, A.; Nayfeh, H.M.; Onishi, K.; Narasimha, S.
Source
2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
We present a 45-nm SOI CMOS technology that features: i) aggressive ground-rule (GR) scaling enabled by 1.2NA/193nm immersion lithography, ii) high-performance FET response enabled by the integration of multiple advanced strain and activation techniques, iii) a functional SRAM with cell size of 0.37μm 2 , and iv) a porous low-k (k=2.4) dielectric for minimized back-end wiring delay. The list of FET-specific performance elements includes enhanced dual-stress liner (DSL), advanced eSiGe, stress memorization (SMT), and advanced anneal (AA). The resulting PFET/NFET Idsat values, at Vdd of 1.0V and 45nm GR gate pitch, are 840μA/μm and 1240μA/μm respectively. The global wiring delay achieved with k=2.4 reflects a 20% reduction compared to k=3.0.