부산대학교 도서관

In this work, the impact of hot-carrier (HC) induced degradation together with the effect of back bias (BB) on the random telegraph noise (RTN) in the SOI and tensile strained SOI n-FETs are investigated. It is found that the forward BB(FBB) can help to suppress the RTN of both the SOI and SSOI n-FETs with the former exhibiting larger improvement. Furthermore, as the ON time increases, n-FETs operated with FBB show less drain current $I_{\mathrm{D}}$ and RTN degradation as FBB pulls the carriers away from the top interface, reducing the occurrence of trapping/de-trapping and the generation of interface defects over time. The effect of FBB and reverse BB (RBB) on the RTN magnitude was explained by the change of carrier density distribution in the Si channel, according to the calibrated TCAD simulation results.