학술논문
Test pattern for microwave dielectric properties of SrBi/sub 2/Ta/sub 2/O/sub 9/
Document Type
Conference
Author
Source
Research in Microelectronics and Electronics, 2005 PhD Microelectronics and Electronics Research in Microelectronics and Electronics, 2005 PhD. 1:221-224 vol.1 2005
Subject
Language
Abstract
A test structure employing a one-step lithography process has been built for measuring the complex impedance of ferroelectric capacitors at microwaves. The measurements are compared to the results of a finite element analysis with the aim of developing an electrical model of the test structure in which parasitic elements appear. These elements can be experimentally measured and partially de-embedded. The purpose of this paper is the characterization of strontium-bismuth tantalate (SBT) capacitors for microwave ICs or SoCs.