학술논문
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
Document Type
Conference
Author
Source
1992 International Technical Digest on Electron Devices Meeting Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International. :849-852 1992
Subject
Language
ISSN
0163-1918
Abstract
The experimentally observed V/sub T/ roll-off and Drain Induced Barrier Lowering (DIBL) at channel lengths of approximately=0.2 mu m in Si-MOSFETs is underestimated by conventional 2D numerical simulations. In this paper it is shown that this is due to B segregation from the channel region towards the As-implanted source/drain regions during the As activation anneal. The resulting B depletion close to the source and drain lowers the local V/sub T/ and contributes significantly (up to 50% in 0.2 mu m n-channel MOSFETs) to the V/sub T/ roll-off and DIBL in sub-quarter micron NMOSFETs. This B redistribution originates mainly from ion implantation damage in the source and drain.ETX