학술논문
1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 12(10):527-529 Oct, 1991
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
The fabrication of a GaAs detector which operates in the 1.3- to 1.5- mu m optical range is reported. The detector is a P-i-N photodiode with an intrinsic layer composed of undoped GaAs which was grown at 225 degrees C and subsequently annealed at 600 degrees C. This growth process has been demonstrated to produce a high density of As precipitates in the low-temperature grown region, which the authors show to exhibit absorption through internal photoemission. The internal Schottky barrier height of the As precipitates is found to be 0.7 eV, leading to reasonable room-temperature responsivity out to around 1.7 mu m.ETX