학술논문

High-mobility modulation-doped SiGe-channel p-MOSFETs

Document Type

Periodical

Author

Verdonckt-Vandebroek, S.; Crabbe, E.F.; Meyerson, B.S.; Harame, D.L.; Restle, P.J.; Stork, J.M.C.; Megdanis, A.C.; Stanis, C.L.; Bright, A.A.; Kroesen, G.M.W.; Warren, A.C.

Source

IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 12(8):447-449 Aug, 1991

Subject

Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Epitaxial layers
MOSFET circuits
Silicon germanium
Germanium silicon alloys
Threshold voltage
Doping
Fabrication
Degradation
Buildings
Transconductance

Language

ISSN

0741-3106
1558-0563

Abstract

A novel subsurface SiGe-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n/sup +/ polysilicon gate, and p/sup +/ modulation doping is used. A boron-doped layer is located underneath the graded and undoped SiGe channel to minimize process sensitivity and maximize transconductance. Low-field hole mobilities of 220 cm/sup 2//V-s at 300 K and 980 cm/sup 2//V-s at 82 K were achieved in functional submicrometer p-MOSFETs.ETX

Online Access

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