학술논문

Deep dry etching of SOI for silicon micromachined structures
Document Type
Conference
Source
1997 IEEE International SOI Conference Proceedings SOI conference SOI Conference, 1997. Proceedings., 1997 IEEE International. :60-61 1997
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Dry etching
Micromachining
Silicon on insulator technology
Dielectric substrates
CMOS process
Resonance
Stress
Resists
Plasma chemistry
Plasma temperature
Language
ISSN
1078-621X
Abstract
This paper reports on preliminary results in the production of novel silicon micromachined structures in thick Silicon On Insulator (SOI) at DERA (Malvern). Significant interest in SOI for micromachining has existed for several years, however, until recently the quality of SOI material was not sufficiently high to make it a viable alternative to mainstream bulk silicon technology. Specially designed thick SOI layers have been deep dry etched and structures released to demonstrate the applicability of the material and etch technique to micromachining. An exciting combination of the advantages of both surface and bulk micromachining is offered by SOI. The process used is fully compatible with CMOS and it is thought that the SOI material will become of major importance in many areas of micromachining, particularly micro-inertial components.