부산대학교 도서관

In this article, based on the integrated passive device (IPD) technology with GaAs substrate, an elliptical bandpass filter (BPF) is proposed with a reasonable and compact layout. Within the operating frequency of 4.27-4.9 GHz, the proposed design has an insertion loss of less than 1 dB. This miniaturized filter, with the size of about 1.32mm 2 , is fabricated using IPD technology. Probes on the wafer and the vector network analyzer are used to obtain its accurate S-parameters. The measurement result of this BPF is in good agreement with its simulation. That demonstrates the high frequency selectivity of the designed filter and shows its capability of using in modern communication technology.