학술논문
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Document Type
Conference
Author
Source
2020 15th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2020 15th European. :89-92 Jan, 2021
Subject
Language
Abstract
Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.