학술논문
A Vacuum Transistor Based on Electron Emission From SiOₓ Tunneling Diodes
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):3216-3220 May, 2024
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
An ON-chip vacuum transistor based on electron emission from SiOx tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel between the electron emitter and collector electrode is modulated by an underneath gate electrode. The device performances are studied by the finite element simulation method. An ON/OFF current ratio up to 105 and a subthreshold slope of ~500 mV/dec are obtained by simulation. Experimentally, a vacuum transistor based on SiOx tunneling diodes in a surrounding structure is fabricated, achieving an ON/OFF current ratio of 104 and a subthreshold slope of ~5 V/dec. The performance degradation in experiments is mainly attributed to unoptimized device structures.