부산대학교 도서관

p-microcrystalline-silicon / n-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique. The solar cell structure was illuminated on the opposite side of the normally-formed heterojunction. With this inverted structure, the photovoltaic cell has the design potential increasing the light-incident surface texturing and it avoids the use of transparent conducting oxide (TCO). The HW-CVD has employed for the deposition of a very thin intrinsic hydrogenated amorphous silicon (i-a-Si) as a buffer-layer, and boron-doped hydrogenated microcrystalline silicon (p-µc-Si) on crystalline-silicon (c-Si) substrate. Solar cells were fabricated on Czochralsky (CZ)-grown phosphorous-doped c-Si within 0.5 to 1 ohm-cm. The tungsten catalyst temperature (T fil ) was settled to 1600 °C and 1950 °C for i-a-Si and p-µc-Si films, respectively. Silane (SiH 4 ) and hydrogen (H 2 ) gases were used and diluted diborane (B 2 H 6 ) for p-doping at the substrate temperatures (T sub ) of 200 °C. The obtained I-V characteristics under simulated solar radiation at 100mW/cm 2 are: Jsc =26.1 mA/cm 2 ; Voc = 545 mV; Jm = 21.4 mA/cm 2 ; Vm = 410 mV; FF = 61.7%, with total area efficiency of ŋ = 8.8%.