학술논문

Capacitance measurements on silicon microstrip detectors
Document Type
Conference
Source
IEEE Conference on Nuclear Science Symposium and Medical Imaging Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE. :185 vol.1 1992
Subject
Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Signal Processing and Analysis
Bioengineering
Capacitance measurement
Silicon
Microstrip
Detectors
Strips
Educational institutions
Noise level
Readout electronics
Geometry
Language
Abstract
Summary form only. Load capacitance is the most significant parameter determining the noise level of readout electronics. In the case of silicon microstrip detectors, it is represented by the capacitance of one strip to all the adjacent strips. Measurements of this capacitance on the p- and n-side of detectors with various geometries have been performed. Double-sided detectors with a second metal layer and different readout patterns were also studied.ETX