학술논문

Recent Progress in Silicon Devices for Ultra-High Power Applications
Document Type
Conference
Source
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :36.4.1-36.4.4 Dec, 2021
Subject
Components, Circuits, Devices and Systems
Insulated gate bipolar transistors
Thyristors
Power system measurements
Silicon devices
Density measurement
HVDC transmission
Wind power generation
Language
ISSN
2156-017X
Abstract
Silicon based high-voltage power devices dominate the megawatt to gigawatt power conversion necessary for generation, transmission and distribution grid systems. This goes together with the renewable and storage energy systems integrated into the grid with sufficient power quality to secure its stability and interoperability. The development of phase control thyristors, integrated gate commutated thyristors, and insulated gate bipolar transistors has always focused on increasing the power density via reduced losses and growing electro-thermal robustness with a special focus on reliable operation under normal and fault conditions. Recent advancements in the design and performance of Bipolar and BiMOS device concepts are presented to show how they can support the power conversion also in the coming years.