학술논문
The developing role for nonlinear control design in oxide growth during rapid isothermal processing
Document Type
Conference
Author
Source
Proceeding of the 1996 IEEE International Conference on Control Applications IEEE International Conference on Control Applications held together with IEEE International Symposium on Intelligent Contro Control applications Control Applications, 1996., Proceedings of the 1996 IEEE International Conference on. :840-845 1996
Subject
Language
Abstract
This paper presents the preliminary development of a nonlinear controller to regulate the growth of oxide on silicon in a Rapid Isothermal Processing (RIP) system. The objective is to address one of the issues faced by the US silicon IC industry in manufacturing microelectronic structures with low power consumption, high-speed reduced size, and built-in reliability. The control design begins with a description of the dynamic growth process, this description provides a general nonlinear functional relationship between the properties of the silica, i.e., oxide thickness and compressive stress, and the control inputs, lamp power and gas flow. Based on this generic process model, the integrator backstepping approach is used to design a nonlinear, full-state feedback process controller. Included in the paper is a discussion of the use of Raman Spectroscopy as a means of measuring temperature, oxide thickness, and oxide stress during the growth process.