학술논문
Delay variation mapping induced by dynamic laser stimulation
Document Type
Conference
Author
Source
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :305-311 2005
Subject
Language
ISSN
1541-7026
1938-1891
1938-1891
Abstract
We present a novel technique based on dynamic laser stimulation (DLS) to characterize CMOS structures and to highlight time margin alterations by delay variation mapping. We used photoelectric laser stimulation (PLS) or thermal laser stimulation (TLS) to perturb CMOS transistor characteristics in order to affect propagation delays. The proposed methodology further extends the capabilities of DLS techniques such as soft defect localization (SDL) and laser assisted device alteration (LADA) to characterize defective ICs.