학술논문
Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 31(4):308-310 Apr, 2010
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
We have investigated the carrier mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors by the $\mu$-Czochralski process at a low-temperature process $(< \hbox{350}\ ^{\circ}\hbox{C})$. The high laser energy density near the ablation phenomenon that completely melts the grain filter during the crystallization is responsible for the high tensile strain of the silicon grains, which leads to carrier mobility enhancement.