학술논문
A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(8):1227-1230 Aug, 2022
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
A vertical channel ferroelectric-FET (FeFET) with HfO 2 -based ferroelectric (Fe-HfO 2 ) and atomic layer deposition (ALD) Indium oxide (InOx) channel has been developed and demonstrated for 3D high-density memory applications. Reliable memory operation has been confirmed with memory window (MW) >1V in gate length (L g ) = 50nm short channel FeFETs. Polar-axis transition of Fe-HfO 2 from in- plane in the initial film to out-of-plane after electrical cycling has been verified by both experimental and theoretical studies. A vertical channel anti-ferroelectric (AFe) FET (AFeFET) with ZrO 2 has been also demonstrated by making use of half-loop hysteresis in AFe, which can be a new solution for the weak erase problem seen in oxide semiconductor channel FeFETs.