학술논문

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices
Document Type
Conference
Source
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2017 12th European. :37-40 Oct, 2017
Subject
Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
HEMTs
MODFETs
Aluminum gallium nitride
Wide band gap semiconductors
Stress
Gallium nitride
AlGaN/AlN/GaN/AlGaN Heterostructure
SelfHeating
style
Polarization
Electro-Thermal Simulation
Language
Abstract
The interplay of self-heating and polarization affecting the current is studied in Al 0.32 Ga 0.68 N/AlN/GaN/Al 0.1 Ga 0.9 N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model. The electro-thermal simulations show hot-spots at the edge of the drain contact due to a large electric field affecting the device reliability. Due to the applied electrical stress, the total polarization, relative to the 18 pm heterostructure, decreases by 7 %, 10 % and 17% during a reduction of the source-to-drain distance to the 12 pm, 8 pm, and 4 pm, respectively, as a result of the additional strain induced by electrical stress. This additional stress on source/drain contacts reduces the polarization at the surface as a result of the inverse piezoelectric effect.