학술논문
Novel Cu-to-Cu Bonding With Ti Passivation at 180 $^{\circ}{\rm C}$ in 3-D Integration
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(12):1551-1553 Dec, 2013
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180$^{\circ}{\rm C}$. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.