학술논문

S4-P8: Applications for epitaxial lift-off of III-V materials
Document Type
Conference
Source
2014 Lester Eastman Conference on High Performance Devices (LEC) Lester Eastman Conference on High Performance Devices (LEC), 2014. :1-3 Aug, 2014
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Photovoltaic cells
Substrates
Light emitting diodes
Detectors
Epitaxial growth
Gallium arsenide
Epitaxial Lift-Off (ELO)
Solar
Photovoltaic
Light emitting diode (LED)
Heterojunction bipolar transitor (HBT) flexible
high-efficiency
cost reduction
light-weight
Language
Abstract
Epitaxial lift-off (ELO) is a disruptive technology that can enable substantial performance enhancement and cost reduction for epitaxially grown III-V devices [1],[2],[3],[4]. MicroLink Devices, Inc (MLD) is a recognized technological leader in the field of compound semiconductor growth and high efficiency solar cell manufacturing. ELO is a process that involves selectively etching a “release” layer to detach the epitaxially grown functional III-V material from the substrate on which it is grown. The ELO process can be used on a variety of device architectures from solar cells to heterojunction bipolar transistors (HBTs) and light emitting diodes (LEDs).