학술논문
Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(4):536-538 Apr, 2011
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
The InGaN/sapphire-based photovoltaic (PV) cells with $\hbox{Al}_{0.14} \hbox{Ga}_{0.86}\hbox{N/In}_{0.21}\hbox{Ga}_{0.79}\hbox{N}$ superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 $\hbox{mA/cm}^{2}$, 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.