부산대학교 도서관

There are many process steps needed to fabricate semi-conductor devices. In general, the goal of every process is to impact all portions of the wafer identically and great effort is applied to eliminating any non-uniformity. However, it is not always possible to remove all variation, especially to the level required by advanced devices. This is especially true for plasma processes such as CVD and etch based on the tendency of plasma density to vary along the radial dimension [1]. The ion implantation process is one of the best candidates to compensate for such variations because of its flexible dose control.