학술논문
Back-end induced IMO layer charging
Document Type
Conference
Author
Source
1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE. :451-453 1991
Subject
Language
Abstract
Field Inversion generated in a CMOS double metal process due to the back-end process was studied. Generated positive charges were related to reaction between PETEOS and noncarbon based SOG during alloying. Replacing PETEOS with Si-rich PETEOS or PEOXIDE eliminated the charging problems and improved yield.ETX