학술논문
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes
Document Type
Conference
Author
Lin, Ku-Feng; Noguchi, Hiroki; Shih, Yi-Chun; Yuh, Perng-Fei; Lee, Yuan-Jen; Chang, Tung-Cheng; Huang, Sheng-Po; Lin, Yu-Fan; Lee, Chun-Ying; Huang, Yen-Hsiang; Tsai, Jui-Che; Adham, Saman; Noel, Peter; Yazdi, Ramin; Gershoig, Marat; Shin, YangJae; Joshi, Vineet; Wong, Ted; Jiang, Meng-Ru; Wu, J. J.; Cheng, Chun-Tai; Wang, Yu-Jen; Chuang, Harry; Chih, Yu-Der; Wang, Yih; Chang, Tsung-Yung Jonathan
Source
2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:292-294 Feb, 2024
Subject
Language
ISSN
2376-8606
Abstract
STT-MRAM has been demonstrated as a viable embedded non-volatile memory (NVM) with 20-year data retention at 150°C, a high write endurance (>1M cycles), and the ability to tolerate solder reflow [1]. However, for working memory applications, even higher endurance, fast write speed, and small memory size are necessary. By optimizing the magnetic-tunnel-junction (MTJ) stack for a lower write current, while relaxing retention requirements (e.g., 1 min @ 125°C), STT-MRAM can achieve a higher endurance (>10 12 cycles) and a smaller bit cell size. Therefore, STT-MRAM is a promising alternative to SRAM as a working memory solution, while also offering a higher memory density compared to SRAM-based solutions.