학술논문
Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies
Document Type
Conference
Author
Source
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :401-402 Jun, 2022
Subject
Language
ISSN
2158-9682
Abstract
Ultrathin body exhibits excellent immunity to subthreshold swing (SS) degradation by doping and D it , approaching the ideal SS of 60mV/dec. Highly stacked Ge 0.9 Sn 0.1 ultrathin bodies down to 2nm are fabricated to achieve record low SS of 64mV/dec and record high I ON /I OFF of 1.6x10 7 among GeSn pGAAFETs. Superior inter-channel uniformity and good crystallinity of the 8 stacked Ge 0.9 Sn 0.1 ultrathin bodies are demonstrated by the co-optimization of CVD epitaxy (50 layers) and highly selective isotropic dry etching with low thermal budget (≤400℃). Moreover, the improvement of total gate capacitance and intrinsic gate delay using the ultrathin body is confirmed by TCAD due to the reduced stack height.