학술논문

A 16.4-dBm 20.3% PAE 22-dB Gain 77 GHz Power Amplifier in 65-nm CMOS Technology
Document Type
Periodical
Author
Source
IEEE Access Access, IEEE. 9:159541-159548 2021
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Geoscience
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Transformers
Gain
Power generation
Power amplifiers
Radar cross-sections
Impedance matching
Radar
CMOS technology
millimeter-wave circuits
power amplifiers
transformers
Language
ISSN
2169-3536
Abstract
We present a compact W-band power amplifier (PA) for automotive radar application in 65-nm CMOS technology. The circuit adopts a pseudo-differential push-pull configuration based on transformers (TFs) which offer highly efficient and flexible matching networks with minimized area occupancy. We have set the optimal output resistance close to 50 $\Omega $ , design guidelines in sizing active devices for each stage, and the corresponding transformers were presented for optimal power efficiency based on an analysis of surrounding matching networks. Working under a supply voltage of 1.3-V, the implemented 77GHz PA achieved a 3-dB gain bandwidth of 9-GHz (72.5–81.5 GHz), a peak gain of 22.4 dB, a saturated power ( $P_{sat}$ ) of 16.4 dBm, and a peak power-added efficiency (PAE) of 20.3%. The area for the core layout is only 0.05 mm 2 , which demonstrates the highest power density among the recently reported W-band CMOS PAs.