학술논문
Increasing the Speed of an InP-Based Integration Platform by Introducing High Speed Electroabsorption Modulators
Document Type
Periodical
Source
IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 25(5):1-8 Jan, 2019
Subject
Language
ISSN
1077-260X
1558-4542
1558-4542
Abstract
We report high speed electroabsorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low dc bias voltage below 1 V at an increased temperature, as well as operation in a semicooled environment, tested in the range of 20 °C –60 °C. Furthermore, we improve the intrinsic S -parameter response with a codesign circuit. The intrinsic 3-dB bandwidth of a 100-μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below −10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three-time speed increase of the existing platform, from previously offered 9 GHz (using an EAM) to 24 GHz shown in this paper.