학술논문
Progress in efforts to increase power in GaAs-based highpower diode lasers
Document Type
Conference
Author
Source
2022 28th International Semiconductor Laser Conference (ISLC) Semiconductor Laser Conference (ISLC), 2022 28th International. :1-2 Oct, 2022
Subject
Language
Abstract
Research into power-scaling in GaAs-based broad-area lasers is summarized, focusing on 940nm single emitters, increasing power by combining triply-asymmetric high-gain epitaxial designs with regrown lateral blocking. In parallel, power is increased by transitioning more laser types to highly asymmetric designs, illustrated with 970nm grating-stabilized bars.