학술논문

A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
Document Type
Conference
Source
2020 Argentine Conference on Electronics (CAE) Electronics (CAE), 2020 Argentine Conference on. :82-86 Feb, 2020
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
General Topics for Engineers
Power, Energy and Industry Applications
Robotics and Control Systems
Temperature dependence
Design methodology
CMOS technology
Topology
Transistors
Mirrors
Standards
Current Mirror
Self-biased Current Source
Low Power
PVT variations
ABM
Language
Abstract
In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a $1.5\mu \mathrm{m}$ CMOS technology, and a 100nA current reference in a $0.18\mu \mathrm{m}$ CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.