학술논문
Many-body Effects on the High Injection Level Performance for Micro Light Emitting Diode
Document Type
Conference
Author
Source
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2020 17th China International Forum on. :215-218 Nov, 2020
Subject
Language
Abstract
In this work, many-body effects including band-gap renormalization (BGR), Coulomb enhancement (CE) and carrier collisions (CS) are considered when the micro light emitting diode (micro-LED) operates in the injection level above 100 kA/cm 2 . Electroluminescence (EL) spectra of 20 micron-diameter LEDs show the redshift and broadening with current density increasing from 50 to 360 kA/cm 2 . An abnormal increases of external quantum efficiency (EQE) are observed above 100 kA/cm 2 . BGR effect combined with thermal effect lead to redshift of EL peak wavelength. Carriers collision dominates spectral width. CE enhances radiative recombination and also results in blue shift of peak wavelength.